Course title
1M983800,7M5300001
Nano Devices and Materials

 ueno kazuyoshi Click to show questionnaire result at 2017
Course content
In this course, students will learn fundamentals of semoconductor device operations such as Bipolar transistors, MOSFETs, MESFETs, Interconnects, Power Devices, and fundamentals of nanodevices. Students will summarize the technology trends of an advanced semiconductor device and discuss the future of the device based on the learned fundamental knowledge.
Purpose of class
To obtain fundamental knowledge of semiconductor devices from basic to advanced nanoelectronics.
Goals and objectives
  1. can explain physics of MOSFET operation and can design the structure
  2. can explain physics of MESFET, HEMT operation and can design the structure
  3. can explain device structures and opetation of power devices
  4. can explain LSI interconnect processes and can explain the technologies
  5. can explain electronic structure and trasport physics of nano devices
  6. can investigate the trends in the electron devices and make the presentation
Language
English
Class schedule

 Class schedule HW assignments (Including preparation and review of the class.) Amount of Time Required
1． Course guidance Read textbook chap. 0 180minutes
2． Physics and properties of semiconductirs (1) Energy bands Read textbook chap. 1 200minutes
3． Physics and properties of semiconductirs (2) carrier transport phenomena Read textbook chap. 2 190minutes
4． p-n junction and heterojunction Read textbook chap. 3 190minutes
5． Bipolar transistor and related devices, Power devices Read textbook chap. 4 190minutes
6． MOS capacitors Read textbook chap. 5 190minutes
7． MOSFET fundamentals Read textbook chap. 5 190minutes
8． Advanced MOSFET and related devices Read textbook chap. 6 190minutes
9． MESFET and related devices Read textbook chap. 7 190minutes
10． Integrated devices Read textbook chap. 15 and handout 190minutes
11． Interconnect technology Read textbook chap. 15 and handout 190minutes
12． Electron transport in nanostructures Read handout 180minutes
13． Graphene devices and interconnect Read handout 180minutes
14． Invesigation and presentation on research trend on advanced electron devices Prepare for the presenrtion 210minutes
Total. - - 2660minutes
Relationship between 'Goals and Objectives' and 'Course Outcomes'

 Report Presentation Total.
1. 10% 10%
2. 10% 10%
3. 10% 10%
4. 10% 10%
5. 10% 10%
6. 50% 50%
Total. 50% 50% -
Evaluation method and criteria
Presentation and report: 100%, more than 60% score is required to obtain the credit.
Criteria of 60%: can solve example problems from the text-book in reports about 60%, and can make a presentation on the structure and operations of a device learned in this course.
Students who will not attend the class 6 times (0.5 for late attendance) and more will not be evaluated (automatically fail).
Textbooks and reference materials
Textbook: S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices, 3rd edition, Wiley
Prerequisites
Need to learn electromagnetic field theory, basic quantum physics, solid state physics, electronic materials.
Office hours and How to contact professors for questions
  • 12:30-13:00 on Thursday. at Room 09K25. (It is preferrable to make an appointment with e-mail in advance.)
  • When you want to meet me at another time, please let me know by email for the appointment.
Relation to the environment
Non-environment-related course
Regionally-oriented
Non-regionally-oriented course
Development of social and professional independence
  • Course that cultivates an ability for utilizing knowledge
Active-learning course
More than one class is interactive
Course by professor with work experience
Work experience Work experience and relevance to the course content if applicatable
Applicatable R & D on compound semiconductor devices (7 years).
R & D on interconnect technology for LSIs (14 years).
The lecturer will lecture fundamentals of semiconductor devices based on the experience in device development in industry.
Last modified : Thu Mar 21 15:05:42 JST 2019