|Class schedule||HW assignments (Including preparation and review of the class.)||Amount of Time Required|
History and trend of semiconductor devices and integrated circuits.
|Read Chapter 0 of textbook.||190minutes|
|2.||Energy bands of semiconductors
Origin of band structure and how they are related to the motion of electrons in semiconductor materials such as Si and GaAs.
|Read Chapter 1.1-.4||190minutes|
Relation between Fermi level and carrier concentration in thermal equilibrium. Fermi level changes with doping and temperature.
|Read Chapter 1.5-.6.||190minutes|
|4.||Carrier transport phenomena (1) drift and diffusion
Mechanism of drift and diffusion.
|Read Chapter 2.1-.2||190minutes|
|5.||Carrier transport phenomena (2) other transport process
Other transport phenomena such as generation and recombination, thermionic emission, and tunneling. Current continuity equation..
|Read Chapter 2.3-6||190minutes|
|6.||p-n junction (1)
Band diagram of p-n junction, depletion region, and the depletion capacitance.
|Read Chapter 3.1-3||190minutes|
|7.||p-n junction (2) Midterm quiz
Current-voltage characteristics of p-n junction, junction breakdown, and heterojunction.
|Read Chapter 3.4, 6, 7, submit report-1||190minutes|
Operation principle and characteristics of bipolar transistors. Heterojunction bipolar transistors.
|Read Chapter 4.1-5||190minutes|
Operation principle of power devices such as thyristors, BTO, and IGBTs.
|Read Chapter 4.6||190minutes|
Ideal MIS capacitor, SiO2/Si MOS capacitor
Non-ideal MOS capacitor, current transport in insulator
|Read Chapter 5.1,2, 3||190minutes|
Fundamental MOSFET, various kinds of MOSFETs
|Read Chapter 5.5||190minutes|
MOSFET scaling, CMOS, SOI, MOS memory devices
|Read Chapter 6||190minutes|
|13.||MESFET and related devices
Metal-semiconductor contacts, MESFET operation principle, MODFET
|Read Chapter 7||190minutes|
|14.||Final examination and its explanation||Review the handouts, submit report-2||190minutes|
|Midterm quiz||Report||Final exam||Total.|
|Work experience||Work experience and relevance to the course content if applicatable|
|Applicatable||R & D of compound semiconductor devices for 7 years.
R & D of interconnect technology for LSI for 14 years.
The lecturer will lecture structure and operation principle of semiconductor devices and LSIs based on the experience in device development in industry.