Course title
G09144003
Semiconductor Devices

ueno kazuyoshi Click to show questionnaire result at 2018
Course description
Semiconductor devices such as transistors are widely used for electronic systems. In this course, students will learn semiconductor device fundamentals such as energy bands of semiconductors, carrier conduction mechanism, p-n junctions, bipolar transistors, power devices, metal-oxide-semiconductor (MOS) structures, MOS field effect transistors (FETs), metal-semiconductor contacts, metal-semiconductor FETs.
Purpose of class
To learn the basics, structures, operation principles, and characterictics of semiconductor devices and integrated circuits such as bipolar transistors, thyritors, MOS diodes, MOSFETs, MESFETs, and LSIs.
Goals and objectives
  1. Can explain fundamental semiconductor physics such as energy band, carrier conduction in semiconductors, and pn junctions.
  2. Can explain operation principles of semiconductor devices such as bipolar transistors, MOSFETs, MESFETs, and power devices.
  3. Can explain device characteristics of semiconductor devices such as bipolar transistors, MOSFETs, MESFETs, and power devices.
Language
English
Class schedule

Class schedule HW assignments (Including preparation and review of the class.) Amount of Time Required
1. Introduction
History and trend of semiconductor devices and integrated circuits.
Read Chapter 0 of textbook. 190minutes
2. Energy bands of semiconductors
Origin of band structure and how they are related to the motion of electrons in semiconductor materials such as Si and GaAs.
Read Chapter 1.1-.4 190minutes
3. Carrier concentration
Relation between Fermi level and carrier concentration in thermal equilibrium. Fermi level changes with doping and temperature.
Read Chapter 1.5-.6. 190minutes
4. Carrier transport phenomena (1) drift and diffusion
Mechanism of drift and diffusion.
Read Chapter 2.1-.2 190minutes
5. Carrier transport phenomena (2) other transport process
Other transport phenomena such as generation and recombination, thermionic emission, and tunneling. Current continuity equation..
Read Chapter 2.3-6 190minutes
6. p-n junction (1) 
Band diagram of p-n junction, depletion region, and the depletion capacitance.
Read Chapter 3.1-3 190minutes
7. p-n junction (2) Midterm quiz
Current-voltage characteristics of p-n junction, junction breakdown, and heterojunction.
Read Chapter 3.4, 6, 7, submit report-1 190minutes
8. Bipolar transistor
Operation principle and characteristics of bipolar transistors. Heterojunction bipolar transistors.
Read Chapter 4.1-5 190minutes
9. Power devices
Operation principle of power devices such as thyristors, BTO, and IGBTs.
Read Chapter 4.6 190minutes
10. MIS capacitor
Ideal MIS capacitor, SiO2/Si MOS capacitor
Non-ideal MOS capacitor, current transport in insulator
Read Chapter 5.1,2, 3 190minutes
11. MOSFET
Fundamental MOSFET, various kinds of MOSFETs
Read Chapter 5.5 190minutes
12. Advanced MOSFET
MOSFET scaling, CMOS, SOI, MOS memory devices
Read Chapter 6 190minutes
13. MESFET and related devices
Metal-semiconductor contacts, MESFET operation principle, MODFET
Read Chapter 7 190minutes
14. Final examination and its explanation Review the handouts, submit report-2 190minutes
Total. - - 2660minutes
Relationship between 'Goals and Objectives' and 'Course Outcomes'

Midterm quiz Report Final exam Total.
1. 20% 20% 0% 40%
2. 0% 5% 25% 30%
3. 0% 5% 25% 30%
Total. 20% 30% 50% -
Evaluation method and criteria
Midterm quiz 20% Final Examination 50%, Report 30%, Pass by 60 % achievement. Criteria of 60% is that students can slove the example problems in the textbook about 60 % and understand the fundamental items about 60 %.
Textbooks and reference materials
“Semiconductor Devices, Physics and Technology, 3rd edition” S. Sze and M. Lee, Wiley.
Prerequisites
Knowledge of fundamental electromagnetic theory, quantum mechanics, and solid state physics.
Office hours and How to contact professors for questions
  • Thursday 12:30-13:10 at 09K25 (Kazuyoshi Ueno Lab.)
    It is better to make a contact in advance.
Regionally-oriented
Non-regionally-oriented course
Development of social and professional independence
  • Course that cultivates a basic problem-solving skills
Active-learning course
More than one class is interactive
Course by professor with work experience
Work experience Work experience and relevance to the course content if applicatable
Applicatable R & D of compound semiconductor devices for 7 years.
R & D of interconnect technology for LSI for 14 years.
The lecturer will lecture structure and operation principle of semiconductor devices and LSIs based on the experience in device development in industry.
Education related SDGs:the Sustainable Development Goals
  • 4.QUALITY EDUCATION
  • 7.AFFORDABLE AND CLEAN ENERGY
  • 9.INDUSTRY, INNOVATION AND INFRASTRUCTURE
  • 13.CLIMATE ACTION
Last modified : Sat Mar 21 12:45:02 JST 2020