Course title
1M989000,7M5400001
Epitaxial Semiconductor Materials

 ishikawa hiroyasu Click to show questionnaire result at 2018
Course content
This course deals with the story of the development of III-V nitride semiconductors. You will also learn the epitaxial growth techniques, physical and device characteristics of III-V nitride semiconductors. (Lectures in turn)
Purpose of class
You are expected to acquire the basic concepts of epitaxial growth and thin film technologies of III-V nitride semiconductors. (Lectures in turn)
Goals and objectives
  1. Be able to explain GaN growth physics and film characterizations
  2. Be able to explain InGaN growth physics and film characterizations
  3. Be able to explain the growth of GaN-based light emitting device structures and device characterizations
Language
English
Class schedule

 Class schedule HW assignments (Including preparation and review of the class.) Amount of Time Required
1． Guidance & background of GaN No need preparation 0minutes
2． GaN growth (1) MOCVD, AlN buffer Prepare your lecture 210minutes
3． GaN growth (2) GaN buffer layer Prepare your lecture 210minutes
4． n-GaN growth, p-GaN growth (1) EB irradiation Prepare your lecture 210minutes
5． p-GaN growth (1) Thermal annealing Prepare your lecture 210minutes
6． p-GaN growth (2) Hole compensation mechanism Prepare your lecture 210minutes
7． InGaN growth (1) InGaN on GaN templates Prepare your lecture 210minutes
8． InGaN growth (2) InGaN SLs Prepare your lecture 210minutes
9． InGaN LEDs (1) Bulk InGaN/AlGaN Prepare your lecture 210minutes
10． InGaN LEDs (2) Co-doped InGaN/AlGaN Prepare your lecture 210minutes
11． InGaN LEDs (3) InGaN QWs Prepare your lecture 210minutes
12． InGaN LEDs (4) White LEDs, and emission mechanisms Prepare your lecture 210minutes
13． InGaN LDs Prepare your lecture 210minutes
14． Final presentaion Prepare your presentation file related to epitaxial semiconductors. 210minutes
Total. - - 2730minutes
Relationship between 'Goals and Objectives' and 'Course Outcomes'

 Goals and Objective Total.
1. 33% 33%
2. 33% 33%
3. 34% 34%
Total. 100% -
Evaluation method and criteria
Evaluation method:
A 6th absence may constitute a failing grade in this course.
Lecture(s) in turn 50%, and final presentation 50%. You must score at least 60 points or higher out of 100 to pass.
Criteria:
If you are able to explain a summary, and an important achievement of a topic of this course, you will get 60 points out of 100 to pass.
Textbooks and reference materials
Course materials will be distributed in class.
(Shuji Nakamura, and Gerhard. Fasol, “The Blue Laser Diode”, Springer, 1997.)
Supplemental materials will be announced or distributed in class.
Prerequisites
Electronic or electric engineering graduates are expected.
Office hours and How to contact professors for questions
  • -Face-to-Face learning: 12:30-13:20 (Lunch break) on Monday @ #09L25 Research Bldg. at TOYOSU campus
    -Distance learning: 17:00-18:40 on Monday @Zoom: https://shibaura-it.zoom.us/j/99333628372
    You can ask or contact me by e-mail in advance.
    email: ishkwh@sic.shibaura-it.ac.jp
Regionally-oriented
Development of social and professional independence
    Active-learning course
    Most classes are interactive
    Course by professor with work experience
    Work experience Work experience and relevance to the course content if applicable
    N/A N/A
    Education related SDGs:the Sustainable Development Goals
    • 9.INDUSTRY, INNOVATION AND INFRASTRUCTURE
    Last modified : Sun Mar 21 15:14:26 JST 2021