Course title
G09144003
Semiconductor Devices

ueno kazuyoshi Click to show questionnaire result at 2018
Course description
Semiconductor devices such as transistors are widely used for electronic systems. In this course, students will learn semiconductor device fundamentals such as energy bands of semiconductors, carrier conduction mechanism, p-n junctions, bipolar transistors, power devices, metal-oxide-semiconductor (MOS) structures, MOS field effect transistors (FETs), metal-semiconductor contacts, metal-semiconductor FETs.
Purpose of class
To learn the basics, structures, operation principles, and characterictics of semiconductor devices and integrated circuits such as bipolar transistors, thyritors, MOS diodes, MOSFETs, MESFETs, and LSIs.
Goals and objectives
  1. Can explain fundamental semiconductor physics such as energy band, carrier conduction in semiconductors, and pn junctions.
  2. Can explain operation principles and characteristics of p-n junction and Schottky diodes using band diagram.
  3. Can explain structures, band diagram, operation principles, and device characteristics of bipolar devices such as bipolar transistors, thyristor, and power devices.
  4. Can explain structure, band diagram, carrier distribution, C-V characteristics, and threshold voltage. Can explain structures and operation principle of MOSFET.
  5. Can explain fundamental structure, devices, and fabrication process of LSIs. Can explain structures and features of advanced transistors.
Language
English
Class schedule

Class schedule HW assignments (Including preparation and review of the class.) Amount of Time Required
1. Introduction
History and trend of semiconductor devices and integrated circuits.
Read Chapter 0 of textbook. Review hand-out. 190minutes
2. Energy bands of semiconductors
Origin of band structure and how they are related to the motion of electrons in semiconductor materials such as Si and GaAs.
Read Chapter 1.1-.4, Review hand-out. 190minutes
3. Carrier concentration
Relation between Fermi level and carrier concentration in thermal equilibrium. Fermi level changes with doping and temperature.
Read Chapter 1.5-.6. Review hand-out. 190minutes
4. Carrier transport phenomena (1) drift and diffusion
Mechanism of drift and diffusion.
Read Chapter 2.1-.2, Review hand-out. 190minutes
5. Carrier transport phenomena (2) other transport process
Other transport phenomena such as generation and recombination, thermionic emission, and tunneling. Current continuity equation., Report(1)
Read Chapter 2.3-6, Review hand-out. 190minutes
6. p-n junction (1) 
Band diagram of p-n junction, depletion region, and the depletion capacitance.
Read Chapter 3.1-3, Review hand-out. 190minutes
7. p-n junction (2) Midterm quiz
Current-voltage characteristics of p-n junction, junction breakdown, and heterojunction.
Read Chapter 3.4, 6, 7, submit report-1 190minutes
8. Bipolar transistor
Operation principle and characteristics of bipolar transistors. Heterojunction bipolar transistors.
Read Chapter 4.1-5, Review hand-out. 190minutes
9. Power devices
Operation principle of power devices such as thyristors, BTO, and IGBTs.
Read Chapter 4.6, Review hand-out. 190minutes
10. MIS capacitor
Ideal MIS capacitor, SiO2/Si MOS capacitor
Non-ideal MOS capacitor, current transport in insulator
Read Chapter 5.1,2, 3, Review hand-out. 190minutes
11. MOSFET
Fundamental MOSFET, various kinds of MOSFETs
Read Chapter 5.5, Review hand-out. 190minutes
12. Advanced MOSFET
MOSFET scaling, CMOS, SOI, MOS memory devices
Report (2)
Read Chapter 6, Review hand-out. 190minutes
13. MESFET and related devices
Metal-semiconductor contacts, MESFET operation principle, MODFET
Read Chapter 7, Review hand-out. 190minutes
14. Final examination and its explanation Review the handouts, submit report-2 190minutes
Total. - - 2660minutes
Relationship between 'Goals and Objectives' and 'Course Outcomes'

Midterm quiz Final exam Report(1) Report(2) Total.
1. 15% 0% 15% 0% 30%
2. 10% 0% 10% 0% 20%
3. 0% 10% 0% 10% 20%
4. 0% 10% 0% 10% 20%
5. 0% 5% 0% 5% 10%
Total. 25% 25% 25% 25% -
Evaluation method and criteria
Midterm quiz 25% Final Examination 25%, Report(1) 25%, Report(2) 25% pass by 60 % achievement. Criteria of 60% is that students can solve the problems and answer the questions in the quiz, exam, and report problems about 60 %.
Textbooks and reference materials
“Semiconductor Devices, Physics and Technology, 3rd edition” S. Sze and M. Lee, Wiley.
Prerequisites
Knowledge of fundamental electromagnetic theory, quantum mechanics, and solid state physics.
Office hours and How to contact professors for questions
  • Monday 12:30-13:10 at Zoom
    Please make a contact in advance by email to get the Zoom information.
Regionally-oriented
Non-regionally-oriented course
Development of social and professional independence
  • Course that cultivates a basic problem-solving skills
Active-learning course
More than one class is interactive
Course by professor with work experience
Work experience Work experience and relevance to the course content if applicable
Applicable R & D of compound semiconductor devices for 7 years.
R & D of interconnect technology for LSI for 14 years.
The lecturer will lecture structure and operation principle of semiconductor devices and LSIs based on the experience in device development in industry.
Education related SDGs:the Sustainable Development Goals
  • 9.INDUSTRY, INNOVATION AND INFRASTRUCTURE
Last modified : Sun Mar 21 15:42:29 JST 2021