1. |
physics of semiconductor (1) : Bohr's model, Pauli's exclusion principle, band theory, carriers in intrinsic and extrinsic
semiconductors and their generation mechanism
|
preparation & review : text chapter 1, section 1(p.1~13) |
190minutes |
2. |
physics of semiconductor (2) : electroneutrality condition, mass action law (pn=constant), relationship among carrier density,
Fermi level and doping density
|
preparation & review : text chapter 1, section 2(p.14~25) |
190minutes |
3. |
physics of semiconductor (3) : drift current, diffusion current, Ohm's law in semiconductor, resistivity, conductivity, carrier
mobility, diffusion constant, continuity equation of carrier, Einstein's relation
|
preparation & review : text chapter 1, section 3(p.25~37) |
190minutes |
4. |
pn junction diode (1) : mechanism of rectification property of pn junction |
preparation & review : text chapter 2, section 1(p.40~47) |
190minutes |
5. |
pn junction diode (2) : current-voltage characteristics of pn junction diode |
preparation & review : text chapter 2, section 2(p.47~53) |
190minutes |
6. |
pn junction diode (3) : depletion layer capacitance and diffusion capacitance of pn junction, photodiode |
preparation & review : text chapter 2, section 3(p.53~59) |
190minutes |
7. |
midterm examination |
review : text chapter 1 and 2(p.1~59) |
190minutes |
8. |
bipolar transistor (1) : variation, basic structure, operation principle of bipolar transistor |
preparation & review : text chapter 3, section 1(p.62~68) |
190minutes |
9. |
bipolar transistor (2) : control mechanism of collector current in bipolar transistor, factors determining the current gain |
preparation & review : text chapter 3, section 2(p.68~75) |
190minutes |
10. |
bipolar transistor (3) : grounding scheme, current amplification factor, practical structure and characteristics of bipolar
transistor
|
preparation & review : text chapter 3, section 3(p.76~82) |
190minutes |
11. |
MOSFET(1) : variation of field-effect-transistor, basic device structure of MOSFET, fundamental function of MOS structure,
threshold voltage
|
preparation & review : text chapter 4, section 1-3(p.85~93) |
190minutes |
12. |
MOSFET(2) : capacitance characteristics of MOS structure, static characteristics of MOSFET(ID-VD curve, ID-VG curve) |
preparation & review : text chapter 4, section 4-61(p.93~101) |
190minutes |
13. |
final examination |
review : text chapter 3 and 4 |
190minutes |
14. |
application of electron device : basic constitution, function, role of practical electron devices such as sensors, LSI's, power devices
|
preparation & review : handout, reporting assignment |
190minutes |
Total. |
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2660minutes |