Epitaxial Semiconductor Materials

Course title

1M989000

,7M540000

ISHIKAWA Hiroyasu

Click to show questionnaire result at 2018

Course content

Epitaxy is a technique for growing crystalline thin films with a well-defined crystallographic orientation on a crystalline substrate, and it is widely used in the fabrication of compound semiconductor thin films. In this course, III–V nitride semiconductors are introduced as representative materials that have been extensively researched and developed for high-brightness blue light-emitting diodes (LEDs) and were commercialized in the 1990s. Subsequently, green and ultraviolet LEDs, as well as white LEDs combining blue LEDs with phosphors, were developed. Today, white LEDs have become widely used as lighting sources, replacing incandescent lamps and fluorescent lights, and are indispensable to modern society. Meanwhile, it was difficult to obtain high-quality GaN thin films until the early 1980s. The improvement in material quality and the practical realization of GaN-based devices owe much to the contributions of Shuji Nakamura, Isamu Akasaki, and Hiroshi Amano, who were awarded the 2014 Nobel Prize in Physics. In this course, you will study the physical properties and device characteristics of III–V nitride semiconductors in the context of their historical development, and deepen their understanding of the physics of epitaxial growth and thin-film properties.

Purpose of class

You are expected to acquire the basic concepts of epitaxial growth and thin film technologies of III-V nitride semiconductors.

Goals and objectives

Be able to explain the growth physics of GaN as well as the interpretation of thin-film characterization results. (DP1)
Be able to explain the growth physics of n-type and p-type GaN and the analysis and interpretation of its thin-film characterization results. (DP1)
Be able to explain the growth physics and film characterization techniques of InGaN, as well as the growth of InGaN-based light-emitting device structures and their device characterizations. (DP1)

Relationship between 'Goals and Objectives' and 'Course Outcomes'

	Goals and Objective	Total.
1.	33%	33%
2.	33%	33%
3.	34%	34%
Total.	100%	-

Language

English

Class schedule

	Class schedule	HW assignments (Including preparation and review of the class.)	Amount of Time Required
1．	Guidance & background of GaN	No need preparation	0minutes
2．	GaN growth (1) MOCVD, AlN buffer	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
3．	GaN growth (2) GaN buffer layer	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
4．	-Test1 or report1 -p-GaN growth (1) EB irradiation	-Prepare test1 or report1 -Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
5．	-p-GaN growth (2) p-n junction -n-GaN growth	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
6．	p-GaN growth (2) Thermal annealing	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
7．	p-GaN growth (3) Hole compensation mechanism	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
8．	-Test2 or report2 -InGaN growth (1) InGaN on GaN templates	-Prepare test2 or report2 -Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
9．	-InGaN growth (2) Doped-InGaN and InGaN SLs -InGaN LEDs (1) Bulk InGaN/AlGaN	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
10．	InGaN LEDs (2) Co-doped InGaN/AlGaN	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
11．	-InGaN LEDs (3) InGaN QWs -InGaN LDs (1) Pulsed operation	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
12．	Emission mechanisms of LEDs and LDs	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
13．	InGaN LDs (2) RT CW operation	Review last week’s lesson. Read the corresponding part in the textbook.	210minutes
14．	-InGaN QDs -Test3 or report3	-Review last week’s lesson. Read the corresponding part in the textbook. -Prepare test3 or report3	210minutes
Total.	-	-	2730minutes

Evaluation method and criteria

Evaluation method:
A 6th absence may constitute a failing grade in this course.
Three tests (or three reports) 100%. You must score at least 60 points or higher out of 100 to pass.
Criteria:
If you able to answer the representative growth conditions and representative thin film characteristics for each material, you will get 60 points out of 100 to pass.

Feedback on exams, assignments, etc.

ways of feedback	specific contents about "Other"
Feedback in the class

Textbooks and reference materials

Course materials will be distributed in class.
(Shuji Nakamura, and Gerhard. Fasol, “The Blue Laser Diode”, Springer, 1997.)
Supplemental materials will be announced or distributed in class.

Prerequisites

Electronic or electric engineering graduates are expected.

Office hours and How to contact professors for questions

12:30-13:20 (Lunch break) on Monday @ #09L25 Research Bldg. at TOYOSU campus
You can ask or contact me by e-mail in advance.
email: ishkwh@sic.shibaura-it.ac.jp

Regionally-oriented

Non-regionally-oriented course

Development of social and professional independence

Non-social and professional independence development course

Active-learning course

Most classes are interactive

Course by professor with work experience

Work experience	Work experience and relevance to the course content if applicable
N/A	N/A

Education related SDGs:the Sustainable Development Goals

9.INDUSTRY, INNOVATION AND INFRASTRUCTURE

Last modified : Mon Mar 02 12:13:14 JST 2026