Compound semiconductor physics and devices

Course title

1M986500

Click to show questionnaire result at 2018

Course content

This course deals with compound semiconductors, and their devices such as GaAs MESFETs, GaAs-based HEMTs, GaAs-based HBTs, GaN HEMTs.

Purpose of class

You are expected to acquire the basic concepts of compound semiconductors and their devices.

Goals and objectives

Be able to explain basic mechanism of GaAs MESFETs
Be able to explain basic modeling of GaAs MESFETs
Be able to explain basic mechanism of GaAs HEMTs
Be able to explain basic mechanism of GaAs HBTs
Be able to explain basic mechanism of GaN HEMTs

Language

Japanese

Class schedule

	Class schedule	HW assignments (Including preparation and review of the class.)	Amount of Time Required
1．	Guidance Introduction of compound semiconductors and devises	No need preparation	0minutes
2．	GaAs MESFET (1) Structure basic MESFET operation	Review last week’s lesson Read the provided course material(s)	210minutes
3．	GaAs MESFET (2) Structure and epitaxy	Review last week’s lesson Read the provided course material(s)	210minutes
4．	GaAs MESFET (3) Structure and device processes Small test1	Review last week’s lesson Read the provided course material(s)	210minutes
5．	GaAs MESFET (4) Static characteristics and FET modeling	Review last week’s lesson Read the provided course material(s)	210minutes
6．	GaAs MESFET (5) FET modeling Small test2	Review last week’s lesson Read the provided course material(s)	210minutes
7．	GaAs MESFET (6) Small and large signal models Small test3	Review last week’s lesson Read the provided course material(s)	210minutes
8．	GaAs HEMT (1) Electron scattering in bulk and low dimensional semiconductors	Review last week’s lesson Read the provided course material(s)	210minutes
9．	GaAs HEMT (2) Formation mechanism of 2DEG	Review last week’s lesson Read the provided course material(s)	210minutes
10．	GaAs HEMT (3) Basic HEMT operation and noises Small test4	Review last week’s lesson Read the provided course material(s)	210minutes
11．	HBT (1) Basic BJT operation	Review last week’s lesson Read the provided course material(s)	210minutes
12．	HBT (2) HBT operation Small test5	Review last week’s lesson Read the provided course material(s)	210minutes
13．	GaN HEMT (1) GaN-based materials; Epitaxy and polarity	Review last week’s lesson Read the provided course material(s)	210minutes
14．	GaN HEMT (2) Basic AlGaN/GaN HEMT operation Small test6	Review last week’s lesson Read the provided course material(s)	210minutes
Total.	-	-	2730minutes

Relationship between 'Goals and Objectives' and 'Course Outcomes'

	Goals and objectives	Total.
1.	20%	20%
2.	20%	20%
3.	20%	20%
4.	20%	20%
5.	20%	20%
Total.	100%	-

Evaluation method and criteria

Evaluation method:
A 6th absence may constitute a failing grade in this course.
Temporary small tests (6 times for now) 100%. You must score at least 60 points or higher out of 100 to pass.
Criteria:
If you are able to explain one of several important points in each subject equivalent to course and supplement materials, you will get 60 points out of 100 to pass.

Textbooks and reference materials

Course materials will be distributed in class.
Supplemental materials will be announced or distributed in class.

Prerequisites

Basic knowledge in semiconductor physics and devices are required.

Office hours and How to contact professors for questions

Lunch break on Wednesday. You can ask or contact me by e-mail in advance.
email: ishkwh@sic.shibaura-it.ac.jp

Regionally-oriented

Non-regionally-oriented course

Development of social and professional independence

Course that cultivates a basic problem-solving skills

Active-learning course

More than one class is interactive

Course by professor with work experience

Work experience	Work experience and relevance to the course content if applicatable
N/A	N/A

Education related SDGs:the Sustainable Development Goals

9.INDUSTRY, INNOVATION AND INFRASTRUCTURE

Last modified : Sat Mar 21 13:08:43 JST 2020